Conventional equipment-Molecular Beam Epitaxy (MBE) Deposition
Main use:
The device is used for the growth of optical crystals、superconductors、organic compounds and such thin-film materials, and other high-melting-point、multi-element and gas-element-containing material of complex layered superlattice and multi-layer film material.
System main structure:
The system consists of vacuum chamber (epitaxial chamber, sample-in chamber)、sample transfer mechanism、sample-rotation holder、vacuum system、vacuum measurement、electrical control、gas、computer control and other parts. Specific as below:
Epitaxial growth chamber: epitaxial growth of materials in ultrahigh vacuum,
Size：￠ 450mm, ultimate vacuum: 5.0X10-8Pa
Sample-in chamber: fast load of sample, and ensure ultrahigh vacuum environment of epitaxial chamber
Size ￠ 200X300mm ultimate vacuum: 5.0X10-5Pa
Substrate table: rotation, 0-100 rounds / min, heating, 0-600 degrees; revolution
High energy electron diffractometer: monitoring the growth process in situ
CCD imaging: observing the diffraction-spot image、intensity change, collecting data, storing, printing
Quadrupole mass spectrometer：system leak detection and residual gas analysis in chamber
Electrical control system: accurate control of temperature, speed, displacement
Gas ionization system: patented design, ensure working requirements under high vacuum
Pulsed excimer laser: (upon user’s selection)
Laser beam scanning system:
Computer control system: automatic-control heating, rotation, displacement, laser beam scanning (upon user’s selection)
